Description
MOSFET N-CH 100V 100A 8SON Series: NexFET? Amplifier Type: -55°C ~ 150°C (TJ) Applications: Surface Mount Capacitance: 8-TDFN Exposed Pad
Part Number | CSD19532Q5B |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Honeywell |
Description | MOSFET N-CH 100V 100A 8SON |
Series | NexFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 3.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4810pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta), 195W (Tc) |
Rds On (Max) @ Id, Vgs | 4.9 mOhm @ 17A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-VSON (5x6) |
Package / Case | 8-PowerTDFN |
Image |
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