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Part Number | NTJD4105CT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Honeywell |
Description | MOSFET N/P-CH 20V/8V SOT-363 |
Series | - |
Packaging | |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V, 8V |
Current - Continuous Drain (Id) @ 25°C | 630mA, 775mA |
Rds On (Max) @ Id, Vgs | 375 mOhm @ 630mA, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 46pF @ 20V |
Power - Max | 270mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Image | ![]() |
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